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| zener diode chips (dual pad) for esd pr otection wt -z210p 1. featur e: 2. structur e: 3. size: 4. electrical characteristics (t a=25 c) 5. drawing: 6. pr otection cir cuit: 2-1 planar type: silicon diode 3-1 chip size: 11.0 mils 11.0 mils (280 um 280 um). 3-2 chip thickness: 6.0 1.0 mils (152 25.4 um). 3-3 active ar ea: 1/2 7.3 mils 7.3 mils 2 (1/2 186 um 186 um 2). 3-4 dual bonding pad: 1/2 6.8 mils 6.8 mils 2 (1/2 173 um 173 um 2). 3-5 pattern drawing: refer to the attached drawing. 2-2 electr odes: 1-1 silicon zener diode chips for electr ostatic dischar ge (esd) pr otection application 1-2 this specification applies to p-t ype silicon zener diode chip (dual pad) device no:wt -z210p t op side:aluminum alloy(anode). back side:gold layer(cathode). i i i i i i i i i i i i i i i i i i i i i i i i i i i i - + - + p a r a m e t e r s y m b o l c o n d i t i o n m i n . t y p . m a x . u n i t zener voltage reverse leakage i r v r = 4 v v r = 5 v 100 500 na forward v z i z = 5 m a 5.8 6 .3 6.8 v v o l t a g e current v f i f = 2 0 m a 1 . 2 v e l e c t r o s t a t i c d i s c h a r g e e s d h b m m i l - s t d 8 8 3 8. 0 k v t op side (dual bonding pad) dual bonding pad bonding pad back side weitron technology co., l td. tel:886-2-29148158 f ax:886-2-29106796 http://www .weitr on.com.tw hight of hypotenuse: 5.23 mils(133 um). p p n - s u b led led zener pr otection 8 - july - 04 (t op v iew)
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